0.4 W L, S-BAND POWER GaAs MES FET

DESCRIPTION The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable a

文件：79.44 Kbytes 页数：8 Pages

NEC

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N-CHANNEL GaAs MES FET

0.4 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency, e

文件：213.46 Kbytes 页数：10 Pages

RENESAS

瑞萨

N-CHANNEL GaAs MES FET

0.4 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency, e

文件：213.46 Kbytes 页数：10 Pages

RENESAS

瑞萨

0.4 W L, S-BAND POWER GaAs MES FET

DESCRIPTION The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable a

文件：79.44 Kbytes 页数：8 Pages

NEC

瑞萨

0.4 W L, S-BAND POWER GaAs MES FET

Renesas

瑞萨