NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The NE662M04 is fabricated using NECs UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE662M04 is usable in applications from 100 MHz to 10 GHz. The NE662M04 provides excellent low voltage/low current performance. NECs new low profile/flat lead style M0

文件：93.57 Kbytes 页数：10 Pages

NEC

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NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE662M04 is fabricated using NECs UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE662M04 is usable in applications from 100 MHz to 10 GHz. The NE662M04 provides excellent low voltage/low current performance. NECs new low profile/flat lead style

文件：420.27 Kbytes 页数：11 Pages

CEL

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE662M04 is fabricated using NECs UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE662M04 is usable in applications from 100 MHz to 10 GHz. The NE662M04 provides excellent low voltage/low current performance. NECs new low profile/flat lead style

文件：420.27 Kbytes 页数：11 Pages

CEL

Package：SOT-343F；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 3.3V 25GHZ SOT343F

CEL