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型号	下载订购	功能描述	制造商上传企业	LOGO
NE651R479A	文件：501.77 Kbytes Page：11 Pages	MEDIUM POWER GaAs HJ-FET DESCRIPTION NECs NE651R479A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 0.5 Watts of output power (CW) at 3.5 V, and 1 Watt of output power (CW) at 5 文件：501.77 Kbytes 页数：11 Pages	CEL	CEL
NE651R479A	文件：199.45 Kbytes Page：11 Pages	N-CHANNEL GaAs HJ-FET 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear gain, high efficiency and excellent 文件：199.45 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS
NE651R479A	文件：69.19 Kbytes Page：8 Pages	0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear gain, high efficiency and excellent distortion and as a driver amplifi 文件：69.19 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
NE651R479A-A	文件：501.77 Kbytes Page：11 Pages	MEDIUM POWER GaAs HJ-FET DESCRIPTION NECs NE651R479A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 0.5 Watts of output power (CW) at 3.5 V, and 1 Watt of output power (CW) at 5 文件：501.77 Kbytes 页数：11 Pages	CEL	CEL
NE651R479A-T1	文件：69.19 Kbytes Page：8 Pages	0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear gain, high efficiency and excellent distortion and as a driver amplifi 文件：69.19 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
NE651R479A-T1	文件：199.45 Kbytes Page：11 Pages	N-CHANNEL GaAs HJ-FET 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear gain, high efficiency and excellent 文件：199.45 Kbytes 页数：11 Pages	RENESAS 瑞萨	RENESAS
NE651R479A-T1-A	文件：501.77 Kbytes Page：11 Pages	MEDIUM POWER GaAs HJ-FET DESCRIPTION NECs NE651R479A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 0.5 Watts of output power (CW) at 3.5 V, and 1 Watt of output power (CW) at 5 文件：501.77 Kbytes 页数：11 Pages	CEL	CEL
NE651R479A	文件：300 bytes Page：1 Pages	MEDIUM POWER GaAs HJ-FET	CEL	CEL
NE651R479A-EVPW19	文件：100 bytes Page：1 Pages	包装：散装类别：开发板，套件，编程器射频评估和开发套件，开发板描述：EVAL BOARD NE651R479A 1.9GHZ	CEL	CEL
NE651R479A-EVPW24	文件：100 bytes Page：1 Pages	包装：散装类别：开发板，套件，编程器射频评估和开发套件，开发板描述：EVAL BOARD NE651R479A 2.4GHZ	CEL	CEL

详细参数

型号：
NE651R479A
功能描述：
射频GaAs晶体管 L&S Band GaAs HJFET
RoHS：
否
制造商：
TriQuint Semiconductor
技术类型：
pHEMT
频率：
500 MHz to 3 GHz
增益：
10 dB
噪声系数：
正向跨导
gFS（最大值/最小值）：
4 S 漏源电压
闸/源击穿电压：
- 8 V
漏极连续电流：
3 A
最大工作温度：
+ 150 C
功率耗散：
10 W

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市百诺芯科技有限公司	NE651R479A	NEC	23+	TO-59	8510	原装正品代理渠道价格优势	询价
深圳市英瑞尔电子科技有限公司	NE651R479A	NEC	24+	79A	2600	原装现货假一赔十	询价
贸泽芯城（深圳）电子科技有限公司	NE651R479A	NEC	23+		26520	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
万三科技(深圳)有限公司	NE651R479A	NEC(日电电子)	25+	封装	500000	源自原厂成本,高价回收工厂呆滞	询价
深圳市一线半导体有限公司	NE651R479AT1	NEC	24+		17704		询价
深圳市凌旭科技有限公司	NE651R479A-T1	NEC	2016+	SMT-86	6000	只做原装,假一罚十,公司可开17%增值税发票!	询价
千层芯半导体(深圳)有限公司	NE651R479A-A	CEL	24+	原厂原封	4000	原装正品	询价
深圳市鹏和科技有限公司	NE651R479A-T1	NEC	24+	SMT-86	5000	全现原装公司现货	询价
深圳市华来深电子有限公司	NE651R479A-T1-A	RENESAS	23+	SMD	8560	受权代理!全新原装现货特价热卖!	询价
深圳市拓亿芯电子有限公司	NE651R479A-T1(NE651R479AT1)	NEC	25+		30000	代理全新原装现货,价格优势	询价

更多NE651R479A供应商更新时间2026-2-3 9:11:00

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