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NE651R479A规格书详情
0.4 W L-BAND POWER GaAs HJ-FET
DESCRIPTION
The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile
communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear gain, high efficiency and excellent distortion and as a driver amplifier for our NE6510179A and NE6510379A. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• GaAs HJ-FET structure
• High output power
• High linear gain
• High power added efficiency
产品属性
- 产品编号：
NE651R479A-EVPW19
- 制造商：
CEL
- 类别：
开发板，套件，编程器 > 射频评估和开发套件，开发板
- 包装：
散装
- 类型：
FET
- 频率：
1.9GHz
- 配套使用/相关产品：
NE651R479A@1.9GHz
- 所含物品：
板
- 描述：
EVAL BOARD NE651R479A 1.9GHZ
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
ROHS |
13352 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
CEL |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
NEC |
2023+ |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | |||
CEL |
17+ |
原厂原封 |
4000 |
原装正品 |
询价 | ||
RENESAS/瑞萨 |
22+ |
SMD |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
RENESAS(瑞萨)/IDT |
20+ |
- |
1000 |
询价 | |||
NEC |
6000 |
面议 |
19 |
DIP/SMD |
询价 | ||
NEC |
23+ |
30000 |
代理全新原装现货,价格优势 |
询价 | |||
NEC |
23+ |
NA |
5556 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
询价 | ||
RENESAS/瑞萨 |
SMD |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 |
