NE6510179A开发板套件编程器的射频评估开发套件开发板规格书PDF中文资料

厂商型号	NE6510179A
参数属性	NE6510179A 包装为盒；类别为开发板套件编程器的射频评估开发套件开发板；产品描述：EVAL BOARD NE6510179A 1.9GHZ
功能描述	N-CHANNEL GaAs HJ-FET
文件大小	207.76 Kbytes
页面数量	11 页
生产厂商	Renesas Technology Corp
企业简称	RENESAS【瑞萨】
中文名称	瑞萨科技有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-22 22:59:00
人工找货	NE6510179A价格和库存，欢迎联系客服免费人工找货

1 W L-BAND POWER GaAs HJ-FET

DESCRIPTION

The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile

communication and wireless PC LAN systems. It is capable of delivering 1 W of output power (CW) with high linear

gain, high efficiency and excellent distortion.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

• GaAs HJ-FET structure

• High output power : Pout = +31.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +20 dBm

Pout = +32.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm

Pout = +35.0 dBm TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm

• High linear gain : GL = 15 dB TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = 0 dBm

GL = 10 dB TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = 0 dBm

GL = 10 dB TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = 0 dBm

• High power added efficiency : 70 TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +20 dBm

58 TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm

56 TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm