NE6510179A开发板套件编程器的射频评估开发套件开发板规格书PDF中文资料

1 W L-BAND POWER GaAs HJ-FET

DESCRIPTION

The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile

communication and wireless PC LAN systems. It is capable of delivering 1 W of output power (CW) with high linear

gain, high efficiency and excellent distortion.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

• GaAs HJ-FET structure

• High output power : Pout = +31.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +20 dBm

Pout = +32.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm

Pout = +35.0 dBm TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm

• High linear gain : GL = 15 dB TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = 0 dBm

GL = 10 dB TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = 0 dBm

GL = 10 dB TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = 0 dBm

• High power added efficiency : 70 TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +20 dBm

58 TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm

56 TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm