NE6510179A-T1分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

NE6510179A-T1属于分立半导体产品的晶体管-FETMOSFET-射频。由California Eastern Labs制造生产的NE6510179A-T1晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

DESCRIPTION

NECs NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 1.8 watts of output power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5 V with high linear gain, high efficiency, and excellent linearity. Reliability and performance uniformity are assured by NECs stringent quality and control procedures.

FEATURES

• LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel

• USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS

• HIGH OUTPUT POWER:

35 dBm TYP with 5.0 V Vdc

32.5 dBm TYP with 3.5 V Vdc

• HIGH LINEAR GAIN: 10 dB TYP at 1.9 GHz

• LOW THERMAL RESISTANCE: 5°C/W