DESCRIPTION

NECs NE651R479A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 0.5 Watts of output power (CW) at 3.5 V, and 1 Watt of output power (CW) at 5 V with high linear gain, high efficiency, and excellent linearity. Reliability and performance uniformity are assured by NECs stringent quality and control procedures.

FEATURES

• LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel

• USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS

• HIGH OUTPUT POWER:

30 dBm TYP with 5.0 V Vdc

27 dBm TYP with 3.5 V Vdc

• HIGH LINEAR GAIN: 12 dB TYP at 1.9 GHz

• LOW THERMAL RESISTANCE: 30°C/W

NE651R479A属于开发板，套件，编程器 > 射频评估和开发套件，开发板。California Eastern Laboratories制造生产的NE651R479A射频评估和开发套件，开发板本系列中的产品适用于在已知实施环境中，提供能访问射频相关器件的功能或者有助于访问该功能。所含的焦点产品范围从射频信号链元器件（如放大器和检测器）到模块化收发器，以及不直接包含焦点产品的适配器硬件，但此类硬件可供方便地访问用户单独提供的特定射频产品或系列。