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NE680

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package

文件:246.53 Kbytes 页数:19 Pages

NEC

瑞萨

NE680

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件:935.32 Kbytes 页数:19 Pages

CEL

NE68000

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package

文件:246.53 Kbytes 页数:19 Pages

NEC

瑞萨

NE68018-T1

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package

文件:246.53 Kbytes 页数:19 Pages

NEC

瑞萨

NE68019-T1

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package

文件:246.53 Kbytes 页数:19 Pages

NEC

瑞萨

NE68030-T1

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package

文件:246.53 Kbytes 页数:19 Pages

NEC

瑞萨

NE68033-T1B

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package

文件:246.53 Kbytes 页数:19 Pages

NEC

瑞萨

NE68035

NONLINEAR MODEL

PRECISION TIMERS NONLINEAR MODEL

文件:26.71 Kbytes 页数:1 Pages

NEC

瑞萨

NE68035

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package

文件:246.53 Kbytes 页数:19 Pages

NEC

瑞萨

NE68039R-T1

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package

文件:246.53 Kbytes 页数:19 Pages

NEC

瑞萨

技术参数

  • 电压 - 集射极击穿(最大值):

    10V

  • 频率 - 跃迁:

    10GHz

  • 噪声系数(dB,不同 f 时的典型值):

    1.7dB ~ 2.6dB @ 2GHz ~ 4GHz

  • 增益:

    6.5dB ~ 11dB

  • 功率 - 最大值:

    200mW

  • 不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值):

    50 @ 10mA,6V

  • 电流 - 集电极(Ic)(最大值):

    35mA

  • 工作温度:

    150°C(TJ)

  • 安装类型:

    表面贴装

  • 封装/外壳:

    SOT-143R

  • 供应商器件封装:

    SOT-143R

供应商型号品牌批号封装库存备注价格
NEC
24+
SOT-143R
3000
询价
CEL
24+
原厂原封
4000
原装正品
询价
NEC
23+
原厂封装
13528
振宏微原装正品,假一罚百
询价
大量库存NEC
20+
SOT23
49000
原装优势主营型号-可开原型号增税票
询价
CEL
25+
SOT-143
3675
就找我吧!--邀您体验愉快问购元件!
询价
ASTEEL
21+
SOT423
5595
只做原装正品,不止网上数量,欢迎电话微信查询!
询价
NEC
24+
SOT-143
9600
原装现货,优势供应,支持实单!
询价
RENESAS/瑞萨
23+
SOT-23
50000
全新原装正品现货,支持订货
询价
RENESAS
23+
SOT423
50000
全新原装正品现货,支持订货
询价
CEL
22+
NA
3889
加我QQ或微信咨询更多详细信息,
询价
更多NE680供应商 更新时间2025-12-10 15:30:00