NE68018-T1中文资料瑞萨数据手册PDF规格书

DESCRIPTION

NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package styles. The NE680s high fT makes it ideal for low voltage/low current applications, down to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is 35 mA. For higher current applications see the NE681 series.

FEATURES

• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz

• LOW NOISE FIGURE:

1.7 dB at 2 GHz

2.6 dB at 4 GHz

• HIGH ASSOCIATED GAIN:

12.5 dB at 2 GHz

8.0 dB at 4 GHz

• EXCELLENT LOW VOLTAGE

LOW CURRENT PERFORMANCE