3W L, S-BAND POWER GaAs MESFET

DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and per

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NEC

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3W, L/S-BAND MEDIUM POWER GaAs MESFET

DESCRIPTION NECs NE6500379A is a 3 W GaAs MESFET designed for medium power Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and return path MMDS transmitter applications. It is capable of delivering 3 Watts of output power with high linear gain, high efficiency and excellent linearity. Reliability

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CEL

N-CHANNEL GaAs MES FET

N-CHANNEL GaAs MES FET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent dis

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N-CHANNEL GaAs MES FET

N-CHANNEL GaAs MES FET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent dis

文件：219.69 Kbytes 页数：10 Pages

RENESAS

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3W L, S-BAND POWER GaAs MESFET

DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and per

文件：88.52 Kbytes 页数：8 Pages

NEC

瑞萨

3W, L/S-BAND MEDIUM POWER GaAs MESFET

DESCRIPTION NECs NE6500379A is a 3 W GaAs MESFET designed for medium power Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and return path MMDS transmitter applications. It is capable of delivering 3 Watts of output power with high linear gain, high efficiency and excellent linearity. Reliability

文件：162.42 Kbytes 页数：7 Pages

CEL

4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

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GaAs MES FET

4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. To reduce thermal resistance, the device has a PHS (Plated Heat Sink) structure. FEATURES • Class A operation • H

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L&S BAND MEDIUM POWER GaAs MESFET

DESCRIPTION The NE6500496 is a medium power GaAs MESFET designed for up to a 4 W output stage or as a driver for high power devices. The device has no internal matching and can be used from UHF frequencies up to 3.0 GHz. The chips used in this series offer superior reliability and consistent perf

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NEC

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N-CHANNEL GaAs MES FET

10 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650103M is a 10 W GaAs MES FET designed for power transmitter applications for mobile communication base station systems. It is capable of delivering 10 W of output power (CW) with high linear gain, high efficiency and low distortion. Reli

文件：230.89 Kbytes 页数：10 Pages

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