Dolby Noise Reduction Circuit

DESCRIPTION The NE645/646 is a monolithic audio noise reduction circuit designed as direct replacement device for the NE645B/NE646B in Dolby* B-Type noise reduction systems.

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NPN SILICON LOW NOISE RF TRANSISTOR

DESCRIPTION: The ASI NE64535 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz. FEATURES INCLUDE: • NF = 1.6 dB Typical @ 2 GHz • |S21E|2 = 11 dB Typical @ 2 GHz • Hermetic Ceramic Package

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ASI

Dolby Noise Reduction Circuit

DESCRIPTION The NE645/646 is a monolithic audio noise reduction circuit designed as direct replacement device for the NE645B/NE646B in Dolby* B-Type noise reduction systems.

文件：231 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Dolby Noise Reduction Circuit

DESCRIPTION The NE645/646 is a monolithic audio noise reduction circuit designed as direct replacement device for the NE645B/NE646B in Dolby* B-Type noise reduction systems.

文件：231 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Dolby Noise Reduction Circuit

DESCRIPTION The NE645/646 is a monolithic audio noise reduction circuit designed as direct replacement device for the NE645B/NE646B in Dolby* B-Type noise reduction systems.

文件：231 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

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N-CHANNEL GaAs MES FET

1 W L-BAND POWER GaAs MES FET DESCRIPTION The NE6500179A is a 1 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 1 W of output power (CW) with high linear gain, high efficiency and excelle

文件：176.33 Kbytes 页数：10 Pages

RENESAS

瑞萨

N-CHANNEL GaAs MES FET

1 W L-BAND POWER GaAs MES FET DESCRIPTION The NE6500179A is a 1 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 1 W of output power (CW) with high linear gain, high efficiency and excelle

文件：176.33 Kbytes 页数：10 Pages

RENESAS

瑞萨

GaAs MES FET

2.0 W L-BAND, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500278 is a power GaAs FET which provides high gain, high efficiency and high output power in L band and S band. FEATURES • Class AB operation • High output power: 35.5 dBm (TYP.) • High Linear Gain: 9.0 dB (TY

文件：192.84 Kbytes 页数：14 Pages

RENESAS

瑞萨

GaAs MES FET

2.0 W L-BAND, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500278 is a power GaAs FET which provides high gain, high efficiency and high output power in L band and S band. FEATURES • Class AB operation • High output power: 35.5 dBm (TYP.) • High Linear Gain: 9.0 dB (TY

文件：192.84 Kbytes 页数：14 Pages

RENESAS

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3W L, S-BAND POWER GaAs MESFET

DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and per

文件：88.52 Kbytes 页数：8 Pages

NEC

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