NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The NE662M16 is fabricated using NECs UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE662M16 is usable in applications from 100 MHz to over 10 GHz. The NE662M16 provides excellent low voltage/low current performance. NECs new low profile/flat lead st

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NEC

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NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The NE662M16 is fabricated using NECs UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE662M16 is usable in applications from 100 MHz to over 10 GHz. The NE662M16 provides excellent low voltage/low current performance. NECs new low profile/flat lead st

文件：63.42 Kbytes 页数：9 Pages

NEC

瑞萨

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE662M16 is fabricated using NECs UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE662M16 is usable in applications from 100 MHz to over 10 GHz. The NE662M16 provides excellent low voltage/low current performance. NECs new low profile/flat lead s

文件：175.62 Kbytes 页数：10 Pages

CEL

MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The NE664M04 is fabricated using NECs state-of-the-art UHS0 25 GHz fT wafer process. With a transition frequency of 20 GHz, the NE664M04 is usable in applications from 100 MHz to over 3 GHz. The NE664M04 provides P1dB of 26 dBm, even with low voltage and low current, making this devic

文件：128.83 Kbytes 页数：9 Pages

NEC

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MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The NE664M04 is fabricated using NECs state-of-the-art UHS0 25 GHz fT wafer process. With a transition frequency of 20 GHz, the NE664M04 is usable in applications from 100 MHz to over 3 GHz. The NE664M04 provides P1dB of 26 dBm, even with low voltage and low current, making this devic

文件：128.83 Kbytes 页数：9 Pages

NEC

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MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The NE678M04 is fabricated using NECs HFT3 wafer process. With a transition frequency of 12 GHz, the NE678M04 is usable in applications from 100 MHz to 3 GHz. The NE678M04 provides P1dB of 18 dBm, even with low voltage and low current, making this device an excellent choice for the dr

文件：62.41 Kbytes 页数：7 Pages

NEC

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MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The NE678M04 is fabricated using NECs HFT3 wafer process. With a transition frequency of 12 GHz, the NE678M04 is usable in applications from 100 MHz to 3 GHz. The NE678M04 provides P1dB of 18 dBm, even with low voltage and low current, making this device an excellent choice for the dr

文件：62.41 Kbytes 页数：7 Pages

NEC

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NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package

文件：246.53 Kbytes 页数：19 Pages

NEC

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NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package

文件：246.53 Kbytes 页数：19 Pages

NEC

瑞萨

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION NECs NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package

文件：246.53 Kbytes 页数：19 Pages

NEC

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