MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The NE664M04 is fabricated using NECs state-of-the-art UHS0 25 GHz fT wafer process. With a transition frequency of 20 GHz, the NE664M04 is usable in applications from 100 MHz to over 3 GHz. The NE664M04 provides P1dB of 26 dBm, even with low voltage and low current, making this devic

文件：128.83 Kbytes 页数：9 Pages

NEC

瑞萨

MEDIUM POWER NPN SILICON HIGH FRQUENCY TRANSISTOR

文件：275.5 Kbytes 页数：10 Pages

CEL

Small Signal Silicon Bipolars

NPN Silicon Medium Power Transistor (Same as 2SC5754)

Renesas

瑞萨

MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION The NE664M04 is fabricated using NECs state-of-the-art UHS0 25 GHz fT wafer process. With a transition frequency of 20 GHz, the NE664M04 is usable in applications from 100 MHz to over 3 GHz. The NE664M04 provides P1dB of 26 dBm, even with low voltage and low current, making this devic

文件：128.83 Kbytes 页数：9 Pages

NEC

瑞萨

MEDIUM POWER NPN SILICON HIGH FRQUENCY TRANSISTOR

文件：275.5 Kbytes 页数：10 Pages

CEL

包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：EVAL BOARD NE664M04

CEL

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：EVAL BOARD NE664M04 900MHZ

CEL

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：EVAL BOARD NE664M04 2.4GHZ

CEL