N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

文件：226.26 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

60V N-Channel

General Description These logic level N-Channel enhancement This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly

文件：287.25 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

丝印：3055；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

文件：1.92605 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：NDT3055L；Package：SOT-223；60V N-Channel

General Description These logic level N-Channel enhancement This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly

文件：287.25 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching perfo

文件：228.1 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

N-Channel 60-V (D-S) MOSFET

文件：1.01029 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel 60-V (D-S) MOSFET

文件：1.01032 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：378.84 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

N 沟道增强型场效应晶体管 60V，4A，100mΩ

这些N沟道增强模式功率场效应晶体管采用飞兆半导体专有的高单元密度DMOS技术生产。 这种密度非常高的工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而定制的。 这些器件特别适合DC马达控制和DC/DC转换等低电压应用，此类应用需要快速开关、低线路内功率损耗以及抗瞬变能力。 •4 A，60 V。 RDS(ON) = 0.100 Ω @ VGS= 10 V。\n•高密度设计可实现极低的RDS(ON)。\n•采用广泛使用的表面贴装封装，具有高功率和高电流处理能力。;

ONSEMI

安森美半导体

N 沟道逻辑电平增强型场效应晶体管，60V，4A，100mΩ

这些逻辑电平N沟道增强模式功率场效应晶体管采用飞兆专有的高密度DMOS技术生产。 这种密度非常高的工艺是专为最大限度地降低通态电阻，提供卓越开关性能，以及在雪崩和交换模式下承受高能量脉冲而定制的。 这些器件特别适合DC马达控制和DC/DC转换等低电压应用，此类应用需要快速开关、低线路内功率损耗以及抗瞬变能力。 •4 A，60 V。 RDS(ON) = 0.100 Ω @ VGS = 10 V，RDS(ON) = 0.120 Ω @ VGS = 4.5 V。\n•低驱动要求使得能够直接从逻辑驱动器进行操作。 VGS(TH)< 2V。\n•采用高密度单元设计，可实现极低的RDS(ON)。\n•采用广泛使用的表面贴装封装，具有高功率和高电流处理能力。;

ONSEMI

安森美半导体