N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low

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FAIRCHILD

仙童半导体

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching

文件：474.74 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

Silicon Rectifier Diode High−Speed Switch (Surface Mount)

Description: The NTE631 is a high−speed switching diode fabricated in planar technology and encapsulated in a very small rectangular ceramic SMD package. Features: Small Ceramic SMD Package High Switching Speed Applications: High−Speed Switching in Surface Mounted Circuits

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NTE

Low Power, Single-Supply OPERATIONAL AMPLIFIERS TM

文件：176.85 Kbytes 页数：17 Pages

BURR-BROWN

OPERATIONAL AMPLIFIERS

文件：298.45 Kbytes 页数：18 Pages

TI

德州仪器