首页 >NDD02N60ZT4G>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NDD02N60ZT4G | N-Channel Power MOSFET 600 V, 4.0 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
NDD02N60ZT4G | N-Channel Power MOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
NDD02N60ZT4G | N-Channel 650V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | |
NDD02N60ZT4G | N-Channel MOSFET uses advanced trench technology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER |
详细参数
- 型号：
NDD02N60ZT4G
- 功能描述：
MOSFET NFET IPAK 600V 2.2A 4.8R
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
TO-252 |
113400 |
询价 | |||
ON/安森美 |
21+ |
6000 |
原装正品 |
询价 | |||
ON |
22+ |
TO-252 |
2323 |
长源创新-只做原装-----假一赔十 |
询价 | ||
ON |
1408+ |
TO252 |
8000 |
绝对原装进口现货可开增值税发票 |
询价 | ||
ON |
2017+ |
TO-252 |
35556 |
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增 |
询价 | ||
ON |
11+ |
2500 |
询价 | ||||
O |
2022+ |
TO-252 |
5000 |
只做原装公司现货 |
询价 | ||
ON |
1728+ |
? |
7500 |
只做原装进口,假一罚十 |
询价 | ||
ON |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
ON |
22+23+ |
TO-252 |
27190 |
绝对原装正品全新进口深圳现货 |
询价 |
更多NDD02N60ZT4G供应商
更新时间2024-4-29 15:28:00
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