NDF06N60ZH规格书库存现货安森美半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
NDF06N60ZH	文件：124.47 Kbytes Page：7 Pages	N-Channel Power MOSFET 文件：124.47 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
NDF06N60ZH	文件：116.23 Kbytes Page：8 Pages	N-Channel Power MOSFET 600 V, 1.2 文件：116.23 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
SKB06N60	文件：278.56 Kbytes Page：13 Pages	Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 文件：278.56 Kbytes 页数：13 Pages	INFINEON 英飞凌	INFINEON
SKP06N60	文件：459.14 Kbytes Page：15 Pages	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode •75 lower Eoffcompared to previous generation combined with low conduction losses •Short circuit withstand time – 10 µs •Designed for: Motor controls, Inverter •NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable beh 文件：459.14 Kbytes 页数：15 Pages	INFINEON 英飞凌	INFINEON
SKP06N60	文件：278.56 Kbytes Page：13 Pages	Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 文件：278.56 Kbytes 页数：13 Pages	INFINEON 英飞凌	INFINEON

更多NDF06N60ZH供应商更新时间2026-9-27 11:30:00