isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.16Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

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FAIRCHILD

仙童半导体

ALTERNISTORS

DESCRIPTION The TXDV 408 ---> 808 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...) ■ VERY HIGH COMMUTATION : > 28 A/ms (

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STMICROELECTRONICS

意法半导体

HIGH VOLTAGE LINEAR REGULATOR POWER I.C.

DESCRIPTION The VB408, VB408B, VB408FI are fully protected positive adjustable voltage regulators made using a proprietary High Voltage VIPower technology. The device can be connected to a D.C. source (up to 400V) or in off-line application directly to the rectified main (110V/230V). It is parti

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STMICROELECTRONICS

意法半导体

HIGH VOLTAGE LINEAR REGULATOR POWER I.C.

DESCRIPTION The VB408, VB408B, VB408FI are fully protected positive adjustable voltage regulators made using a proprietary High Voltage VIPower technology. The device can be connected to a D.C. source (up to 400V) or in off-line application directly to the rectified main (110V/230V). It is parti

文件：57.33 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体