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NDB6030

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 46A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:345.01 Kbytes 页数:2 Pages

ISC

无锡固电

NDB6030

N-Channel Enhancement Mode Field Effect Transistor

文件:56.17 Kbytes 页数:4 Pages

Fairchild

仙童半导体

NDB6030

N-Channel Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

NDB6030L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件:357.86 Kbytes 页数:7 Pages

Fairchild

仙童半导体

NDB6030L

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 52A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:344.58 Kbytes 页数:2 Pages

ISC

无锡固电

NDB6030PL

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件:56.6 Kbytes 页数:4 Pages

Fairchild

仙童半导体

NDB6030PL

P-Channel 30-V (D-S) MOSFET

文件:967.26 Kbytes 页数:8 Pages

VBSEMI

微碧半导体

NDB6030PL

P 沟道逻辑电平增强型场效应晶体管,-30V,-30A,42mΩ

这些P沟道逻辑电平增强模式功率场效应晶体管采用飞兆专有的高密度DMOS技术生产。 这种密度非常高的工艺是专为最大限度地降低导通阻抗而定制的。 这些器件特别适合需要快速开关、低线路内功率损耗以及抗瞬变能力的DC/DC转换器和高效率开关电路等低电压应用。 -30 A,-30 V。 RDS(ON) = 0.042 Ω @ VGS= -4.5 V,RDS(ON) = 0.025 Ω @ VGS= -10 V。\n 在高温下额定的临界DC电气参数。\n 耐用的内部源极-漏极二极管使得无需使用外部齐纳二极管瞬态抑制器。\n 高密度单元设计,可实现极低的RDS(ON)。\n 175°C最大结温额定值。;

ONSEMI

安森美半导体

NDB6030L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

技术参数

  • Compliance:

    Pb-free

  • Status:

     Active  

  • Description:

     P-Channel Logic Level Enhancement Mode Field Effect Transistor -30V

  • Channel Polarity:

    P-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    -30

  • VGS Max (V):

    16

  • VGS(th) Max (V):

    -3

  • ID Max (A):

    -30

  • PD Max (W):

    75

  • RDS(on) Max @ VGS = 4.5 V(mΩ):

    42

  • RDS(on) Max @ VGS = 10 V(mΩ):

    25

  • Qg Typ @ VGS = 10 V (nC):

    26

  • Ciss Typ (pF):

    1570

  • Package Type:

    D2PAK-3 / TO-263-2

供应商型号品牌批号封装库存备注价格
NSC
05+
原厂原装
741
只做全新原装真实现货供应
询价
24+
3000
公司存货
询价
MOT/ON
22+
TO-
6000
十年配单,只做原装
询价
MOT/ON
25+
TO-
53200
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
FAIRCHILD
24+
原封装
320
原装现货假一罚十
询价
FAIRCHILD
24+
原厂原封
6523
进口原装公司百分百现货可出样品
询价
ONSemiconductor
24+
NA
3000
进口原装正品优势供应
询价
FAIRCHILD
1998
TO263
100
原装现货海量库存欢迎咨询
询价
FSC
25+23+
TO-263
27802
绝对原装正品全新进口深圳现货
询价
NS
24+
TO-263
90000
一级代理商进口原装现货、价格合理
询价
更多NDB6030供应商 更新时间2025-12-1 10:36:00