NDB6030L中文资料仙童半导体数据手册PDF规格书
NDB6030L规格书详情
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
特性 Features
■ 52 A, 30 V. RDS(ON) = 0.0135 W @ VGS=10 V
RDS(ON) = 0.020 W @ VGS=4.5 V.
■ Critical DC electrical parameters specified at elevated
temperature.
■ Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
■ High density cell design for extremely low RDS(ON).
■ 175°C maximum junction temperature rating.
产品属性
- 型号：
NDB6030L
- 功能描述：
MOSFET N-Ch LL FET Enhancement Mode
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
22+ |
SOT263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
onsemi(安森美) |
25+ |
TO-263AB |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
NS |
22+ |
TO-263 |
3000 |
原装正品,支持实单 |
询价 | ||
FAIRCHILD |
25+ |
TO263 |
4500 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
FAIRCHILD |
22+ |
SOT263 |
20000 |
公司只做原装 品质保障 |
询价 | ||
FAIRCHILD |
1998 |
TO263 |
100 |
原装现货海量库存欢迎咨询 |
询价 | ||
24+ |
3000 |
公司存货 |
询价 | ||||
NS |
25+ |
TO-263 |
90000 |
一级代理商进口原装现货、价格合理 |
询价 | ||
FAIRCHILD |
23+ |
TRANS |
65480 |
询价 | |||
FAIRCHI |
24+ |
SOT263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 |
