NDB508BE中文资料仙童半导体数据手册PDF规格书

General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

特性 Features

■ 19 and 17A, 80V. RDS(ON) = 0.08 and 0.10Ω.

■ Critical DC electrical parameters specified at elevated temperature.

■ Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

■ 175°C maximum junction temperature rating.

■ High density cell design (3 million/in²) for extremely low RDS(ON).

■ TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.