NDB508AE中文资料PDF规格书
NDB508AE规格书详情
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
■ 19 and 17A, 80V. RDS(ON) = 0.08 and 0.10Ω.
■ Critical DC electrical parameters specified at elevated temperature.
■ Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
■ 175°C maximum junction temperature rating.
■ High density cell design (3 million/in²) for extremely low RDS(ON).
■ TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
产品属性
- 型号:
NDB508AE
- 制造商:
FAIRCHILD
- 制造商全称:
Fairchild Semiconductor
- 功能描述:
N-Channel Enhancement Mode Field Effect Transistor
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
3000 |
公司存货 |
询价 | |||||
FSC |
1746+ |
TO263 |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
询价 | ||
MOT/ON |
22+ |
TO- |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
MOT/ON |
24+ |
TO- |
67600 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 | ||
MOT/ON |
23+ |
TO- |
10000 |
公司只做原装正品 |
询价 | ||
MOT/ON |
TO- |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
一级代理 |
23+ |
N/A |
58300 |
一级代理放心采购 |
询价 | ||
NSC |
05+ |
原厂原装 |
551 |
只做全新原装真实现货供应 |
询价 | ||
MOT/ON |
6000 |
面议 |
19 |
DIP/SMD |
询价 | ||
isc |
2024 |
D2PAK/TO-263 |
175 |
国产品牌isc,可替代原装 |
询价 |