NDB410AE中文资料仙童半导体数据手册PDF规格书
NDB410AE规格书详情
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
■ 9 and 8A, 100V. RDS(ON) = 0.25 and 0.30Ω.
■ Critical DC electrical parameters specified at elevated temperature.
■ Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
■ 175°C maximum junction temperature rating.
■ High density cell design (3 million/in²) for extremely low RDS(ON).
■ TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
产品属性
- 型号:
NDB410AE
- 制造商:
FAIRCHILD
- 制造商全称:
Fairchild Semiconductor
- 功能描述:
N-Channel Enhancement Mode Field Effect Transistor
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD |
TO-263-2 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
3000 |
公司存货 |
询价 | |||||
MOT/ON |
22+ |
TO- |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
MOT/ON |
24+ |
TO- |
35400 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 | ||
MOT/ON |
23+ |
TO- |
10000 |
公司只做原装正品 |
询价 | ||
MOT/ON |
TO- |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
FAIRCHILD/HA |
23+ |
TO-263 |
9500 |
专业优势供应 |
询价 | ||
NATIONAL/ |
SOT-263 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
nsc |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
询价 | ||
原装FAIRCHI |
2023+ |
SOT263 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 |