P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：56.6 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

P-Channel 30-V (D-S) MOSFET

文件：967.26 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

P 沟道逻辑电平增强型场效应晶体管，-30V，-30A，42mΩ

这些P沟道逻辑电平增强模式功率场效应晶体管采用飞兆专有的高密度DMOS技术生产。 这种密度非常高的工艺是专为最大限度地降低导通阻抗而定制的。 这些器件特别适合需要快速开关、低线路内功率损耗以及抗瞬变能力的DC/DC转换器和高效率开关电路等低电压应用。 -30 A，-30 V。 RDS(ON) = 0.042 Ω @ VGS= -4.5 V，RDS(ON) = 0.025 Ω @ VGS= -10 V。\n 在高温下额定的临界DC电气参数。\n 耐用的内部源极-漏极二极管使得无需使用外部齐纳二极管瞬态抑制器。\n 高密度单元设计，可实现极低的RDS(ON)。\n 175°C最大结温额定值。;

ONSEMI

安森美半导体

N-Channel Enhancement Mode Field Effect Transistor

文件：56.17 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 50 Volts CURRENT 60 Amperes)

文件：230.18 Kbytes 页数：2 Pages

RECTRON

丽正

LOW DROP POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual Schottky rectifier suited for switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-247, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications. FEATURES AND BENEFITS ■ VERY SMALL CO

文件：55.63 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体