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NDB6060L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=48A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=20mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NDB6060L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheselogiclevelN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology. Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingp

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NDB6060L

N-Channel 60-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

NDB6060L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NDP6060

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NDP6060

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NDP6060L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheselogiclevelN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology. Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingp

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NDP6060L

N-Channel60V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Logic-LevelGateDrive •FastSwitching •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

NDP6060L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NDP6060L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    NDB6060L

  • 功能描述:

    MOSFET N-Ch LL FET Enhancement Mode

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
FSC
24+
TO-263
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
onsemi(安森美)
24+
TO-263-3
8357
支持大陆交货,美金交易。原装现货库存。
询价
ON/安森美
24+
TO-263
505348
免费送样原盒原包现货一手渠道联系
询价
FAI
24+
800
询价
NSC
05+
原厂原装
63
只做全新原装真实现货供应
询价
FAIRCHIL
2017+
TO-263
6523
只做原装正品!现货或订货!
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRCHILD
15
全新原装 货期两周
询价
FAIRCHILDSEM
23+
原厂封装
13528
振宏微原装正品,假一罚百
询价
安森美
21+
12588
原装现货,价格优势
询价
更多NDB6060L供应商 更新时间2025-7-21 14:16:00