首页 >NDD02N60Z-1G>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NDD02N60Z-1G | N-Channel Power MOSFET 600 V, 4.0 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
NDD02N60Z-1G | N-Channel Power MOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
NDD02N60Z-1G | N-Channel 650V (D-S)Power MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=2.2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |
详细参数
- 型号：
NDD02N60Z-1G
- 功能描述：
MOSFET NFET IPAK 600V 2.2A 4.8R
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
21+ |
TO-251 |
60000 |
原装正品进口现货 |
询价 | ||
ON |
1438+ |
TO-251-3 |
39500 |
询价 | |||
ON |
17+ |
NA |
6200 |
100%原装正品现货 |
询价 | ||
ON |
2016+ |
TO-251 |
3900 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
ON |
11+ |
60 |
询价 | ||||
ON |
1408+ |
N/A |
15000 |
绝对原装进口现货可开增值税发票 |
询价 | ||
ON |
2020+ |
TO251 |
80 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
ON |
17+ |
DPAK |
6000 |
进口原装正品假一赔十,货期7-10天 |
询价 | ||
ON |
1726+ |
TO-251 |
6528 |
只做进口原装正品现货,假一赔十! |
询价 | ||
ON |
23+ |
TO-251 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 |
更多NDD02N60Z-1G供应商
更新时间2024-4-26 16:40:00
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