| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NDB603 | N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit 文件:65.7 Kbytes 页数:5 Pages | Fairchild 仙童半导体 | Fairchild | |
NDB603 | N-Channel Logic Level Enhancement Mode Field Effect Transistor | ONSEMI 安森美半导体 | ONSEMI | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 46A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件:345.01 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 52A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件:344.58 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit 文件:357.86 Kbytes 页数:7 Pages | Fairchild 仙童半导体 | Fairchild | ||
P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit 文件:56.6 Kbytes 页数:4 Pages | Fairchild 仙童半导体 | Fairchild | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit 文件:65.7 Kbytes 页数:5 Pages | Fairchild 仙童半导体 | Fairchild | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件:305.15 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | ||
N-Channel Enhancement Mode Field Effect Transistor 文件:56.17 Kbytes 页数:4 Pages | Fairchild 仙童半导体 | Fairchild | ||
P-Channel 30-V (D-S) MOSFET 文件:967.26 Kbytes 页数:8 Pages | VBSEMI 微碧半导体 | VBSEMI |
技术参数
- Compliance:
Pb-free
- Status:
Active
- Description:
P-Channel Logic Level Enhancement Mode Field Effect Transistor -30V
- Channel Polarity:
P-Channel
- Configuration:
Single
- V(BR)DSS Min (V):
-30
- VGS Max (V):
16
- VGS(th) Max (V):
-3
- ID Max (A):
-30
- PD Max (W):
75
- RDS(on) Max @ VGS = 4.5 V(mΩ):
42
- RDS(on) Max @ VGS = 10 V(mΩ):
25
- Qg Typ @ VGS = 10 V (nC):
26
- Ciss Typ (pF):
1570
- Package Type:
D2PAK-3 / TO-263-2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
24+ |
TO-263 |
5000 |
全现原装公司现货 |
询价 | ||
FSC |
6000 |
面议 |
19 |
DIP/SMD |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
FAIRCHILD/仙童 |
21+ |
TO-263 |
10000 |
原装现货假一罚十 |
询价 | ||
FSC |
TO-263 |
50000 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
FAIRCHILD/仙童 |
24+ |
NA/ |
3750 |
原装现货,当天可交货,原型号开票 |
询价 | ||
NS |
23+ |
TO-263 |
2800 |
绝对全新原装!现货!特价!请放心订购! |
询价 | ||
FSC |
05+ |
原厂原装 |
4051 |
只做全新原装真实现货供应 |
询价 | ||
24+ |
3000 |
公司存货 |
询价 | ||||
FAIRCHILD |
24+ |
原封装 |
320 |
原装现货假一罚十 |
询价 |
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