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NDB603

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件:65.7 Kbytes 页数:5 Pages

Fairchild

仙童半导体

NDB603

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

NDB6030

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 46A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:345.01 Kbytes 页数:2 Pages

ISC

无锡固电

NDB6030L

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 52A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:344.58 Kbytes 页数:2 Pages

ISC

无锡固电

NDB6030L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件:357.86 Kbytes 页数:7 Pages

Fairchild

仙童半导体

NDB6030PL

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件:56.6 Kbytes 页数:4 Pages

Fairchild

仙童半导体

NDB603AL

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件:65.7 Kbytes 页数:5 Pages

Fairchild

仙童半导体

NDB603AL

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:305.15 Kbytes 页数:2 Pages

ISC

无锡固电

NDB6030

N-Channel Enhancement Mode Field Effect Transistor

文件:56.17 Kbytes 页数:4 Pages

Fairchild

仙童半导体

NDB6030PL

P-Channel 30-V (D-S) MOSFET

文件:967.26 Kbytes 页数:8 Pages

VBSEMI

微碧半导体

技术参数

  • Compliance:

    Pb-free

  • Status:

     Active  

  • Description:

     P-Channel Logic Level Enhancement Mode Field Effect Transistor -30V

  • Channel Polarity:

    P-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    -30

  • VGS Max (V):

    16

  • VGS(th) Max (V):

    -3

  • ID Max (A):

    -30

  • PD Max (W):

    75

  • RDS(on) Max @ VGS = 4.5 V(mΩ):

    42

  • RDS(on) Max @ VGS = 10 V(mΩ):

    25

  • Qg Typ @ VGS = 10 V (nC):

    26

  • Ciss Typ (pF):

    1570

  • Package Type:

    D2PAK-3 / TO-263-2

供应商型号品牌批号封装库存备注价格
FSC
24+
TO-263
5000
全现原装公司现货
询价
FSC
6000
面议
19
DIP/SMD
询价
FAIRCHILD/仙童
23+
TO-263
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
21+
TO-263
10000
原装现货假一罚十
询价
FSC
TO-263
50000
一级代理 原装正品假一罚十价格优势长期供货
询价
FAIRCHILD/仙童
24+
NA/
3750
原装现货,当天可交货,原型号开票
询价
NS
23+
TO-263
2800
绝对全新原装!现货!特价!请放心订购!
询价
FSC
05+
原厂原装
4051
只做全新原装真实现货供应
询价
24+
3000
公司存货
询价
FAIRCHILD
24+
原封装
320
原装现货假一罚十
询价
更多NDB603供应商 更新时间2025-11-29 10:20:00