Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection

Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • L

文件：173.41 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Protected Power MOSFET 2.6 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ ESD Protection

文件：154.27 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Protected Power MOSFET

文件：89.91 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

箝位 MOSFET，N 沟道，带 ESD 保护

NCV8440 是一款带保护 N 沟道功率 MOSFET。保护功能包括用于过电压保护的集成式漏极-门极箝位。 • Diode Clamp Between Gate and Source\n• Active Overvoltage Gate to Drain Clamp\n• Internal Series Gate Resistance;

ONSEMI

安森美半导体

Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection

Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • L

文件：173.41 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection

Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • L

文件：173.41 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection

Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • L

文件：173.41 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection

Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • L

文件：173.41 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection

Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • L

文件：173.41 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection

Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • L

文件：173.41 Kbytes 页数：9 Pages

ONSEMI

安森美半导体