Protected Power MOSFET

文件：89.91 Kbytes 页数：9 Pages

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Protected Power MOSFET 2.6 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ ESD Protection

文件：154.27 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Protected Power MOSFET

文件：89.91 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Protected Power MOSFET 2.6 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ ESD Protection

文件：126.7 Kbytes 页数：9 Pages

ONSEMI

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箝位 MOSFET，N 沟道，带 ESD 保护

NCV8440 is a protected N-Channel power MOSFET device. The protection feature includes integrated Drain-to-Gate clamping for overvoltage protection. • Diode Clamp Between Gate and Source\n• High Energy Capability for Inductive Loads\n• ESD ProtectionHBM 5000 V\n• Low Switching Noise Generation\n• Active Overvoltage Gate to Drain Clamp\n• Scalable to Lower or Higher RDS(on)\n• Internal Series Gate Resistance;

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Package：TO-261-4，TO-261AA；包装：托盘 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR MOSFET N-CH SOT223

ONSEMI

安森美半导体

Package：TO-261-4，TO-261AA；包装：托盘 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR MOSFET N-CH SOT223

ONSEMI

安森美半导体