Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection

Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • L

文件：173.41 Kbytes 页数：9 Pages

ONSEMI

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Protected Power MOSFET 2.6 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ ESD Protection

文件：154.27 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Protected Power MOSFET 2.6 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ ESD Protection

文件：126.7 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Protected Power MOSFET

文件：89.91 Kbytes 页数：9 Pages

ONSEMI

安森美半导体