N-channel MOSFET

Features • Low on-state resistance : RDS(on) = 12.9 mΩ max. ( VGS = 10 V, ID = 30 A ) • Low Ciss : Ciss = 2170 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±60 A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

文件：806.76 Kbytes 页数：7 Pages

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N-channel MOSFET 60 V, 65 A, 8.4 mΩ

Features • Low on-state resistance RDS(on) = 8.4 mΩ max. ( VGS = 10 V, ID = 32.5 A ) • Low Ciss : Ciss = 3300 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±65A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

文件：673.22 Kbytes 页数：7 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 65A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.53 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel MOSFET 60 V, 65 A, 8.4 mΩ

Features • Low on-state resistance RDS(on) = 8.4 mΩ max. ( VGS = 10 V, ID = 32.5 A ) • Low Ciss : Ciss = 3300 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±65A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

文件：673.22 Kbytes 页数：7 Pages

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N-channel MOSFET 60 V, 52 A, 14.3 mΩ

Features • Low on-state resistance RDS(on) = 14.3 mΩ max. ( VGS = 10 V, ID = 26 A • Low Ciss : Ciss = 1950 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±52A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

文件：678.53 Kbytes 页数：7 Pages

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瑞萨

N-channel MOSFET 60 V, 52 A, 14.3 mΩ

Features • Low on-state resistance RDS(on) = 14.3 mΩ max. ( VGS = 10 V, ID = 26 A • Low Ciss : Ciss = 1950 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±52A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

文件：678.53 Kbytes 页数：7 Pages

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N-channel MOSFET 60 V, 120 A, 3.0 mΩ

Features • Low on-state resistance : RDS(on) = 3.0 mΩ max. ( VGS = 10 V, ID = 60 A ) • Low Ciss : Ciss = 11300 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±120 A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

文件：704.93 Kbytes 页数：7 Pages

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瑞萨

N-channel MOSFET 60 V, 120 A, 3.0 mΩ

Features • Low on-state resistance : RDS(on) = 3.0 mΩ max. ( VGS = 10 V, ID = 60 A ) • Low Ciss : Ciss = 11300 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±120 A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

文件：704.93 Kbytes 页数：7 Pages

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48-Port 1U Rack-Mount Unshielded Blank Keystone/Multimedia Patch Panel, RJ45 Ethernet, USB, HDMI, Cat5e/6

Features Manages and Organizes up to 48 Network Connections This 1U unshielded patch panel features 48 blank cutouts that accommodate any type of keystone jack, including RJ45 Ethernet, HDMI audio/video, voice and USB. Each port is clearly numbered to help you identify connections. Quick an

文件：36.06 Kbytes 页数：2 Pages

TRIPPLITE

DIN-Rail Mounting Enclosure Module for Snap-In Keystone Jacks and Couplers, Left Cover, TAA

Features Organizes Ethernet Network Patch Cables in Your Industrial DIN-Rail Installation This DIN-rail mounting module lets you manage network cable interconnectivity with one blank cutout, which accommodates all Tripp Lite snap-in keystone jacks and in-line couplers. Made from durable plastic

文件：42.89 Kbytes 页数：3 Pages

TRIPPLITE