Multilayer SMD Ceramic Capacitors General Purpose Series

Description: MLCC consists of a conducting material and electrodes. To manufacture a chip-type SMT and achieve miniaturization, high density and high efficiency, ceramic condensers are used. MLCC is made by NP0, X7R and Y5V dielectric material and which provides product with high electrical prec

文件：1.22951 Mbytes 页数：13 Pages

MULTICOMP

易络盟

N-CHANNEL MOSFET FOR SWITCHING

Description The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) • High current ID

文件：217.05 Kbytes 页数：8 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.6mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：280.76 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL MOSFET FOR SWITCHING

Description The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) • High current ID

文件：217.05 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-CHANNEL MOSFET FOR SWITCHING

Description The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) • High current ID

文件：217.05 Kbytes 页数：8 Pages

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N-channel MOSFET Low on-state resistance

Description The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 4150 pF TYP. (VDS = 25 V, VGS = 0 V) • High curr

文件：148.43 Kbytes 页数：8 Pages

RENESAS

瑞萨

N-channel MOSFET Low on-state resistance

Description The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 4150 pF TYP. (VDS = 25 V, VGS = 0 V) • High curr

文件：148.43 Kbytes 页数：8 Pages

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N-channel MOSFET 60 V, 80 A, 8.5 mΩ

Features • Low on-state resistance : RDS(on) = 8.5 mΩ max. ( VGS = 10 V, ID = 40 A ) • Low Ciss : Ciss = 3300 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±80 A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

文件：676.81 Kbytes 页数：7 Pages

RENESAS

瑞萨

N-channel MOSFET 60 V, 80 A, 8.5 mΩ

Features • Low on-state resistance : RDS(on) = 8.5 mΩ max. ( VGS = 10 V, ID = 40 A ) • Low Ciss : Ciss = 3300 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±80 A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

文件：676.81 Kbytes 页数：7 Pages

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N-channel MOSFET

Features • Low on-state resistance : RDS(on) = 12.9 mΩ max. ( VGS = 10 V, ID = 30 A ) • Low Ciss : Ciss = 2170 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±60 A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

文件：806.76 Kbytes 页数：7 Pages

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