N0605N

N-channel MOSFET 60 V, 80 A, 8.5 mΩ

Features •Lowon-stateresistance:RDS(on)=8.5mΩmax.(VGS=10V,ID=40A) •LowCiss:Ciss=3300pFtyp.(VDS=25V) •Highcurrent:ID(DC)=±80A •RoHSCompliant •QualityGrade:Standard •Applications:Forhighcurrentswitching

N0605N-S19-AY

N-channel MOSFET 60 V, 80 A, 8.5 mΩ

Features •Lowon-stateresistance:RDS(on)=8.5mΩmax.(VGS=10V,ID=40A) •LowCiss:Ciss=3300pFtyp.(VDS=25V) •Highcurrent:ID(DC)=±80A •RoHSCompliant •QualityGrade:Standard •Applications:Forhighcurrentswitching

NDS0605

P-ChannelEnhancementModeFieldEffectTransistor

NDS0605

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseP-ChannelenhancementmodefieldeffecttransistorsareproducedusingFairchild’sproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeendesignedtominimizeonstateresistance,provideruggedandreliableperformanceandfastswitching

NDS0605

1.7Q60VP-ChannelMOSFET

TypicalApplications Linecurrentinterrupterintelephonesets ©Highspeedandlinetransformerdrivers

NDS0605-NL

P-Channel60V(D-S)MOSFET

PIB0605M

MOLDEDPOWERCHOKECOIL

PIC0605H

MOLDEDPOWERCHOKECOIL

PSB0605

SMDPOWERINDUCTORS

GENERALSPECIFICATION: e)Resistancetosolderheat:260°C.10secs d)Operatingtemp.:-40°Cto+85°C c)Storagetemp.:-40°Cto+125°C b)Ratedcurrent:Baseontemp.rise&ǻL/L0A=10Max. a)Temp.rise:40°CMax.

QCT0605

CoaxialTerminations

Features: *LowVSWR *Broadband Applications: *Wireless *Transmitter *LaboratoryTest *Radar