N-channel MOSFET 60 V, 80 A, 8.5 mΩ

Features • Low on-state resistance : RDS(on) = 8.5 mΩ max. ( VGS = 10 V, ID = 40 A ) • Low Ciss : Ciss = 3300 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±80 A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

文件：676.81 Kbytes 页数：7 Pages

RENESAS

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N-channel MOSFET 60 V, 80 A, 8.5 mΩ

Features • Low on-state resistance : RDS(on) = 8.5 mΩ max. ( VGS = 10 V, ID = 40 A ) • Low Ciss : Ciss = 3300 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±80 A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

文件：676.81 Kbytes 页数：7 Pages

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Power MOSFETs with Support for High-efficiency Drive and Low Heat Design

The N0605N MOSFETs are suitable for switching (motor drive, etc.) and load switch applications. They feature low on-resistance, high-speed switching, and are very robust. • Low on-state resistance: RDS(on) = 8.5mΩ max. ( VGS = 10V, ID = 40A )\n• Low Ciss: Ciss = 3300 pF typ. (VDS = 25V)\n• High current: ID(DC) = ±80A\n• RoHS Compliant\n• Quality Grade: Standard;

Renesas

瑞萨

P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize onstate resistance, provide rugged and reliable performance and fast switching

文件：167.35 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel Enhancement Mode Field Effect Transistor

文件：353.36 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

1.7Q 60V P-Channel MOSFET

Typical Applications Line current interrupter in telephone sets © High speed and line transformer drivers

文件：2.40102 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子