N0607N

N-channel MOSFET 60 V, 65 A, 8.4 mΩ

Features •Lowon-stateresistance RDS(on)=8.4mΩmax.(VGS=10V,ID=32.5A) •LowCiss:Ciss=3300pFtyp.(VDS=25V) •Highcurrent:ID(DC)=±65A •RoHSCompliant •QualityGrade:Standard •Applications:Forhighcurrentswitching

N0607N-ZK

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=65A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

N0607N-ZK-E1-AY

N-channel MOSFET 60 V, 65 A, 8.4 mΩ

Features •Lowon-stateresistance RDS(on)=8.4mΩmax.(VGS=10V,ID=32.5A) •LowCiss:Ciss=3300pFtyp.(VDS=25V) •Highcurrent:ID(DC)=±65A •RoHSCompliant •QualityGrade:Standard •Applications:Forhighcurrentswitching

N0607N-ZK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=65A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

RJE0607JSP

SiliconPChannelMOSFETSeriesPowerSwitching

RL0607

Unshieldedradialleadeddrumcoreinductors