N-channel MOSFET 60 V, 65 A, 8.4 mΩ

Features • Low on-state resistance RDS(on) = 8.4 mΩ max. ( VGS = 10 V, ID = 32.5 A ) • Low Ciss : Ciss = 3300 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±65A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 65A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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N-channel MOSFET 60 V, 65 A, 8.4 mΩ

Features • Low on-state resistance RDS(on) = 8.4 mΩ max. ( VGS = 10 V, ID = 32.5 A ) • Low Ciss : Ciss = 3300 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±65A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

文件：673.22 Kbytes 页数：7 Pages

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N-Channel Power Mosfet 60 V, 65 A, 8.4 MΩ

The N0607N is N-channel MOS Field Effect Transistor designed for high current switching applications. • Low on-state resistanceRDS(on) = 8.4 mΩ max. ( VGS = 10 V, ID = 32.5 A )\n• Low Ciss : Ciss = 3300 pF typ. ( VDS = 25 V )\n• High current : ID(DC) = ±65A\n• RoHS Compliant\n• Quality Grade : Standard;

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