N-channel MOSFET 60 V, 52 A, 14.3 mΩ

Features • Low on-state resistance RDS(on) = 14.3 mΩ max. ( VGS = 10 V, ID = 26 A • Low Ciss : Ciss = 1950 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±52A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

文件：678.53 Kbytes 页数：7 Pages

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N-channel MOSFET 60 V, 52 A, 14.3 mΩ

Features • Low on-state resistance RDS(on) = 14.3 mΩ max. ( VGS = 10 V, ID = 26 A • Low Ciss : Ciss = 1950 pF typ. ( VDS = 25 V ) • High current : ID(DC) = ±52A • RoHS Compliant • Quality Grade : Standard • Applications : For high current switching

文件：678.53 Kbytes 页数：7 Pages

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Power MOSFETs with Support for High-efficiency Drive and Low Heat Design

The N0608N is N-channel MOS Field Effect Transistor designed for high current switching applications. • Low on-state resistanceRDS(on) = 14.3 mΩ max. ( VGS = 10 V, ID = 26 A )\n• Low Ciss : Ciss = 1950 pF typ. ( VDS = 25 V )\n• High current : ID(DC) = ±52A\n• RoHS Compliant\n• Quality Grade : Standard\n• Applications : For high current switching;

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Radial Leaded Inductors

文件：150.39 Kbytes 页数：7 Pages

ECM

60 V - 5 A - N Channel MOS FET Power Switching

文件：146.32 Kbytes 页数：8 Pages

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Through-Hole Power Inductor

文件：86.32 Kbytes 页数：1 Pages

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伯恩斯