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N030

Polyurethane Adhesive-Back Bumpers

文件:147.88 Kbytes 页数:1 Pages

HEYCO

N0300N

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The N0300N is a switching device which can be driven directly by a 4.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.5 V drive

文件:259.769 Kbytes 页数:8 Pages

RENESAS

瑞萨

N0300N-T1B-AT

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The N0300N is a switching device which can be driven directly by a 4.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.5 V drive

文件:259.769 Kbytes 页数:8 Pages

RENESAS

瑞萨

N0300N-T1B-AT

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件:488.1 Kbytes 页数:9 Pages

VBSEMI

微碧半导体

N0300P

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The N0300P is a switching device which can be driven directly by a 4.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switc

文件:262.7 Kbytes 页数:8 Pages

RENESAS

瑞萨

N0300P-T1B-AT

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The N0300P is a switching device which can be driven directly by a 4.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switc

文件:262.7 Kbytes 页数:8 Pages

RENESAS

瑞萨

N0300P-T1B-AT

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件:484.32 Kbytes 页数:9 Pages

VBSEMI

微碧半导体

N0301N

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件:484.5 Kbytes 页数:9 Pages

VBSEMI

微碧半导体

N0301N

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The N0301N is a switching device which can be driven directly by a 4.0 V power source. The N0301N features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.0 V drive

文件:261.6 Kbytes 页数:8 Pages

RENESAS

瑞萨

N0301N-T1-AT

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The N0301N is a switching device which can be driven directly by a 4.0 V power source. The N0301N features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.0 V drive

文件:261.6 Kbytes 页数:8 Pages

RENESAS

瑞萨

技术参数

  • QG (nC) typ.:

    7.4

  • Nch/Pch:

    Nch

  • Vgs (off) (V) max.:

    2.5

  • Number of Channels:

    Single

  • VGSS (V):

    20

  • VDSS (V) max.:

    30

  • Pch (W):

    0.2

  • ID (A):

    4.5

  • Application:

    Low Voltage General Switching

  • RDS (ON) (mohm) max. @4V or 4.5V:

    83

  • Mounting Type:

    Surface Mount

  • RDS (ON) (mohm) max. @10V or 8V:

    50

  • Package Type:

    TMM/SC-96

  • Ciss (pF) typ.:

    350

  • Production Status:

    Non-promotion

供应商型号品牌批号封装库存备注价格
NEC
23+
SC-96
8650
受权代理!全新原装现货特价热卖!
询价
WESTI
23+
NA
286
专做原装正品,假一罚百!
询价
Renesas
19+
SOT-23F
200000
询价
RENESAS/瑞萨
20+
TMMSC-96
36800
原装优势主营型号-可开原型号增税票
询价
24+
3000
大批量供应优势库存热卖
询价
RENESAS/瑞萨
2447
SOT23-3
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
TRIPP
25+
连接器
793
就找我吧!--邀您体验愉快问购元件!
询价
NEC
1923+
SOT-23
35689
绝对进口原装现货库存特价销售
询价
RENESAS/瑞萨
24+
SOT23-3
9600
原装现货,优势供应,支持实单!
询价
VBSEMI/台湾微碧
23+
SOT-23F
50000
全新原装正品现货,支持订货
询价
更多N030供应商 更新时间2026-3-9 15:55:00