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零件型号	下载订购	功能描述	制造商上传企业	LOGO
N0300N	文件：259.769 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheN0300Nisaswitchingdevicewhichcanbedrivendirectlybya4.5Vpowersource. Thedevicefeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •4.5Vdrive	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
N0300N	文件：300 bytes Page：1 Pages	Power MOSFETs;	RenesasRenesas Technology Corp 瑞萨瑞萨科技有限公司	Renesas
N0300N-T1B-AT	文件：259.769 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheN0300Nisaswitchingdevicewhichcanbedrivendirectlybya4.5Vpowersource. Thedevicefeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,andissuitableforapplicationssuchaspowerswitchofportablemachineandsoon. FEATURES •4.5Vdrive	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
N0300N-T1B-AT	文件：488.1 Kbytes Page：9 Pages	N-Channel 30-V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
N0300N_15	文件：259.769 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS

更多N0300N供应商更新时间2025-7-31 14:00:00