256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

文件：1.812 Mbytes 页数：71 Pages

Micron

美光

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

文件：1.812 Mbytes 页数：71 Pages

Micron

美光

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

文件：1.812 Mbytes 页数：71 Pages

Micron

美光

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM

General Description The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the

文件：1.812 Mbytes 页数：71 Pages

Micron

美光

SYNCHRONOUS DRAM

General Description The 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 134,217,728

文件：1.82868 Mbytes 页数：55 Pages

Micron

美光

SYNCHRONOUS DRAM

General Description The 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 134,217,728

文件：1.82868 Mbytes 页数：55 Pages

Micron

美光

SYNCHRONOUS DRAM

General Description The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 67,108,864-

文件：1.51742 Mbytes 页数：62 Pages

Micron

美光

SYNCHRONOUS DRAM

SYNCHRONOUS DRAM MT48LC16M4A2 – 4 Meg x 4 x 4 banks MT48LC8M8A2 – 2 Meg x 8 x 4 banks MT48LC4M16A2 – 1 Meg x 16 x 4 banks FEATURES • PC66-, PC100-, and PC133-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined oper

文件：1.45885 Mbytes 页数：55 Pages

Micron

美光

SYNCHRONOUS DRAM

SYNCHRONOUS DRAM MT48LC16M4A2 – 4 Meg x 4 x 4 banks MT48LC8M8A2 – 2 Meg x 8 x 4 banks MT48LC4M16A2 – 1 Meg x 16 x 4 banks FEATURES • PC66-, PC100-, and PC133-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined oper

文件：1.45885 Mbytes 页数：55 Pages

Micron

美光

SYNCHRONOUS DRAM

文件：3.65133 Mbytes 页数：51 Pages

Micron

美光