General Description

The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 67,108,864-bit banks is organized as 8192 rows by 2048 columns by 4 bits. Each of the x8’s 67,108,864-bit banks is organized as 8192 rows by 1024 columns by 8 bits. Each of the x16’s 67,108,864-bit banks is organized as 8192 rows by 512 columns by 16 bits.

Features

• PC100- and PC133-compliant

• Fully synchronous; all signals registered on positive edge of system clock

• Internal, pipelined operation; column address can be changed every clock cycle

• Internal banks for hiding row access/precharge

• Programmable burst lengths: 1, 2, 4, 8, or full page

• Auto precharge, includes concurrent auto precharge and auto refresh modes

• Self refresh mode (not available on AT devices)

• Auto refresh

– 64ms, 8192-cycle refresh (commercial and industrial)

– 16ms, 8192-cycle refresh (automotive)

• LVTTL-compatible inputs and outputs

• Single 3.3V ±0.3V power supply

MT48LC16M16A2属于集成电路（IC） > 存储器。美国镁光科技有限公司制造生产的MT48LC16M16A2存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。