SYNCHRONOUS DRAM

GENERAL DESCRIPTION The 16Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual 512K x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16-bit

文件：1.48074 Mbytes 页数：51 Pages

Micron

美光

SYNCHRONOUS DRAM

GENERAL DESCRIPTION The 16Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual 512K x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16-bit

文件：1.48119 Mbytes 页数：51 Pages

Micron

美光

SYNCHRONOUS DRAM

GENERAL DESCRIPTION The 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 16,777,216-bit ban

文件：1.81826 Mbytes 页数：53 Pages

Micron

美光

SYNCHRONOUS DRAM

GENERAL DESCRIPTION The 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 16,777,216-bit ban

文件：1.81826 Mbytes 页数：53 Pages

Micron

美光

SYNCHRONOUS DRAM

GENERAL DESCRIPTION The Micron 16Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual memory array (the 4 Meg x 4 is a dual 2 Meg x 4, and the 2 Meg x 8 is a dual 1 Meg x 8) with a synchronous interface (all signals are regi

文件：1.77348 Mbytes 页数：50 Pages

Micron

美光

SYNCHRONOUS DRAM

GENERAL DESCRIPTION The Micron 16Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual memory array (the 4 Meg x 4 is a dual 2 Meg x 4, and the 2 Meg x 8 is a dual 1 Meg x 8) with a synchronous interface (all signals are regi

文件：1.77348 Mbytes 页数：50 Pages

Micron

美光

SYNCHRONOUS DRAM

GENERAL DESCRIPTION The Micron 16Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 16,777,216 bits. It is internally configured as a dual memory array (the 4 Meg x 4 is a dual 2 Meg x 4, and the 2 Meg x 8 is a dual 1 Meg x 8) with a synchronous interface (all signals are regi

文件：1.77348 Mbytes 页数：50 Pages

Micron

美光

SYNCHRONOUS DRAM

General Description The 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 134,217,728

文件：1.82868 Mbytes 页数：55 Pages

Micron

美光

SDR SDRAM MT48LC128M4A2 ??32 Meg x 4 x 4 banks MT48LC64M8A2 ??16 Meg x 8 x 4 banks MT48LC32M16A2 ??8 Meg x 16 x 4 banks

General Description The 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 134,217,728

文件：3.55629 Mbytes 页数：77 Pages

Micron

美光

SYNCHRONOUS DRAM

General Description The 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 134,217,728

文件：1.82868 Mbytes 页数：55 Pages

Micron

美光