SYNCHRONOUS DRAM

General Description The 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 134,217,728

文件：1.82868 Mbytes 页数：55 Pages

Micron

美光

512Mb x4, x8, x16 SDRAM

文件：2.50339 Mbytes 页数：68 Pages

Micron

美光

SDR SDRAM MT48LC128M4A2 ??32 Meg x 4 x 4 banks MT48LC64M8A2 ??16 Meg x 8 x 4 banks MT48LC32M16A2 ??8 Meg x 16 x 4 banks

General Description The 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 134,217,728

文件：3.55629 Mbytes 页数：77 Pages

Micron

美光

SYNCHRONOUS DRAM

General Description The 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 134,217,728

文件：1.82868 Mbytes 页数：55 Pages

Micron

美光

SDRAM

Micron

美光

SDRAM 512M X16 TSOP

Micron

美光

IC DRAM 512M PARALLEL 54TSOP

Micron

美光

Package：54-TSOP（0.400"，10.16mm 宽）；包装：托盘托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 512MBIT PAR 54TSOP II

Alliance

Package：54-TSOP（0.400"，10.16mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 存储器 描述：IC DRAM 512MBIT PAR 54TSOP II

Alliance

Package：54-TSOP（0.400"，10.16mm 宽）；包装：卷带（TR）剪切带（CT） 类别：集成电路（IC） 存储器 描述：IC DRAM 512MBIT PAR 54TSOP II

ELPIDA

尔必达