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MT48H8M32LFBF-8LITG中文资料PDF规格书
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MT48H8M32LFBF-8LITG规格书详情
General Description
The Micron® 256Mb Mobile SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x16’s 67,108,864-bit banks is organized as 8,192 rows by 512 columns by 16 bits. Each of the x32’s 67,108,864-bit banks is organized as 4,096 rows by 512 columns by 32 bits.
Features
• Fully synchronous; all signals registered on positive edge of system clock
• VDD/VDDQ = 1.70–1.95V
• Internal, pipelined operation; column address can be changed every clock cycle
• Four internal banks for concurrent operation
• Programmable burst lengths: 1, 2, 4, 8, or continuous page1
• Auto precharge, includes concurrent auto precharge
• Auto refresh and self refresh modes
• LVTTL-compatible inputs and outputs
• On-chip temperature sensor to control refresh rate
• Partial-array self refresh (PASR)
• Deep power-down (DPD)
• Selectable output drive (DS)
• 64ms refresh period (8,192 rows)
产品属性
- 型号:
MT48H8M32LFBF-8LITG
- 制造商:
MICRON
- 制造商全称:
Micron Technology
- 256Mb:
16 Meg x 16, 8 Meg x 32 Mobile SDRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Micron Technology Inc. |
21+ |
165-LBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
MICRON |
23+ |
NA |
13118 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
询价 | ||
MICRON/美光 |
21+ |
BGA |
13880 |
公司只售原装,支持实单 |
询价 | ||
MICRON |
1844+ |
BGA |
6528 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
MICRON |
22+ |
BGA |
2140 |
全新原装!现货特价供应 |
询价 | ||
MICRON/美光 |
2023+ |
BGA |
5958 |
询价 | |||
MICRON/美光 |
新批次 |
BGA |
4326 |
询价 | |||
MICRON/美光 |
2022 |
BGA |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
MICRON |
21+ |
BGA/TSOP |
50000 |
特价来袭!美光一级代理入驻114电子网 |
询价 | ||
MICRON/美光 |
BGA |
265209 |
假一罚十原包原标签常备现货! |
询价 |