RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicati

文件：227.43 Kbytes 页数：8 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applicati

文件：227.43 Kbytes 页数：8 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：397.63 Kbytes 页数：11 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：397.63 Kbytes 页数：11 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：397.63 Kbytes 页数：11 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

945 MHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

Overview The MRF9045LR1 and MRF9045LSR1 are designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 28 volt base station equipment \n•Typical Two–Tone Performance at 945 MHz, 28 Volts\nOutput Power: 45 Watts PEP\n\tPower Gain: 18.8 dB\n\tEfficiency: 42%\n\tIMD:  –32 dBc\n\n•Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW Output Power\n\n•Integrated ESD Protection\n\n•Designed for Maximum Gain and Insertion Pha;

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