RF Power Field Effect Transistors

文件：874.65 Kbytes 页数：17 Pages

恩XP

RF Power Field Effect Transistors

文件：874.65 Kbytes 页数：17 Pages

恩XP

RF Power Field Effect Transistors

文件：874.65 Kbytes 页数：17 Pages

恩XP

1880-2025 MHz，37 W平均值，28 V单载波W-CDMA射频功率LDMOS

The MRF8P20160HR3 and MRF8P20160HSR3 are designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Production Tested in a Symmetrical Doherty Configuration\n• 100% PAR Tested for Guaranteed Output Power Capability\n• Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters\n• Internally Matched for Ease of Use\n• Integrated ESD Protection\n• Greater Negative Gate-;

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Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-2025 MHz, 37 W Avg., 28 V

The MRF8P20160HR3 and MRF8P20160HSR3 are designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Production Tested in a Symmetrical Doherty Configuration\n• 100% PAR Tested for Guaranteed Output Power Capability\n• Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters\n• Internally Matched for Ease of Use\n• Integrated ESD Protection\n• Greater Negative Gate-;

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