Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-2025 MHz, 37 W Avg., 28 V

The MRF8P20160HR3 and MRF8P20160HSR3 are designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Production Tested in a Symmetrical Doherty Configuration\n• 100% PAR Tested for Guaranteed Output Power Capability\n• Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters\n• Internally Matched for Ease of Use\n• Integrated ESD Protection\n• Greater Negative Gate-;

恩XP

RF Power Field Effect Transistors

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恩XP

SMD

freescaleFreescale Semiconductor, Inc

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上传：深圳市河锋鑫科技有限公司

TO-272

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司

TO-272

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司