RF Power Field Effect Transistors

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 790 to 820 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--

文件：646.95 Kbytes 页数：15 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

N-Channel Enhancement-Mode Lateral MOSFET

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 750 to 820 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--C

文件：538.28 Kbytes 页数：14 Pages

恩XP

SMD

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳市河锋鑫科技有限公司

TO-272

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司

TO-272

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司