RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：569.01 Kbytes 页数：14 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：569.01 Kbytes 页数：14 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：569.01 Kbytes 页数：14 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

2500-2700 MHz，14 W平均值，28 V单载波W-CDMA，LTE横向N信道射频功率MOSFET

The MRF8P26080HR3 and MRF8P26080HSR3 are designed for W-CDMA and LTE base station applications with frequencies from 2500 to 2700 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Production Tested in a Symmetrical Doherty Configuration\n• 100% PAR Tested for Guaranteed Output Power Capability\n• Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters\n• Internally Matched for Ease of Use\n• Integrated ESD Protection\n• Greater Negative Gate-;

恩XP

Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2500-2700 MHz, 14 W Avg., 28 V

The MRF8P26080HR3 and MRF8P26080HSR3 are designed for W-CDMA and LTE base station applications with frequencies from 2500 to 2700 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Production Tested in a Symmetrical Doherty Configuration\n• 100% PAR Tested for Guaranteed Output Power Capability\n• Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters\n• Internally Matched for Ease of Use\n• Integrated ESD Protection\n• Greater Negative Gate-;

恩XP