MRF6V2150NB中文资料Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V数据手册恩XP规格书

描述 Description

The MRF6V2150NR1 and MRF6V2150NBR1 are designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

特性 Features

• Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 WattsPower Gain: 25 dBDrain Efficiency: 68.3%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
NOTE: PARTS ARE SINGLE–ENDED