MRF6V13250HS中文资料Lateral N-Channel RF Power MOSFET, 1300 MHz, 250 W, 50 V数据手册恩XP规格书

描述 Description

RF Power transistors, MRF6V13250HR3 and MRF6V13250HSR3, are designed for CW and pulse applications operating at 1300 MHz. These devices are suitable for use in CW and pulse applications.

特性 Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 50 VDD Operation
• Characterized from 20 V to 50 V for Extended Power Range
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel.