MRF6V10010N中文资料1090 MHz，10 W，50 V脉冲射频功率LDMOS数据手册恩XP规格书

描述 Description

The MRF6V10010NR4 is an RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications.

特性 Features

• Typical Pulsed Performance: VDD = 50 Volts, IDQ = 10 mA, Pout = 10 Watts Peak (2 W Avg.), f = 1090 MHz, Pulse Width = 100 µsec, Duty Cycle = 20%Power Gain: 25 dBDrain Efficiency: 69%
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• RoHS Compliant
• In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.